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| 型号 | SPD09P06PL |
| 厂商 | Infineon Technologies |
| 描述 | MOSFET P-CH 60V 9.7A DPAK |
| SPD09P06PL PDF |  |
| 代理商 | SPD09P06PL |
| 产品变化通告 | Product Discontinuation 22/Feb/2008 |
| 产品目录绘图 | Mosfets D-PAK, D2-PAK, TO-252 |
| 标准包装 | 1 |
| 系列 | SIPMOS® |
| FET 型 | MOSFET P 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 60V |
| 电流 - 连续漏极(Id) @ 25° C | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 250 毫欧 @ 6.8A，10V |
| Id 时的 Vgs(th)（最大） | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds | 450pF @ 25V |
| 功率 - 最大 | 42W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装 | PG-TO252-3 |
| 包装 | 剪切带 (CT) |
| 其它名称 | SPD09P06PLINCT SPD09P06PLXTINCT SPD09P06PLXTINCT-ND |
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